A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current

Abstract

A charge pumping (CP) technique with gate-induced drain leakage (GIDL) current is proposed to extract interface trap density ( ${N}_{\text {it}}{)}$ in GAA MOSFETs. This GIDL CP characterizes the ${N}_{\text {it}}$ even for an advanced MOSFET with a floating body, small size and a thin gate dielectric, which are difficult to analyze by a conventional CP technique. Using LabVIEW control, a synchronized voltage pulse was automated, and the generated holes were effectively recombined with the traps for ${N}_{\text {it}}$ extraction. In addition, the proposed CP was confirmed to be an analysis tool that can reliably extract the ${N}_{\text {it}}$ while minimizing device stress during the measurement.