DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yong-Bok | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Choi, Pan-Kyu | ko |
dc.contributor.author | Kim, Su-Hyun | ko |
dc.contributor.author | Kim, Tae-Soo | ko |
dc.contributor.author | Lee, So-Young | ko |
dc.contributor.author | Yoon, Jun-Bo | ko |
dc.date.accessioned | 2023-05-30T08:01:39Z | - |
dc.date.available | 2023-05-30T08:01:39Z | - |
dc.date.created | 2023-05-30 | - |
dc.date.created | 2023-05-30 | - |
dc.date.created | 2023-05-30 | - |
dc.date.issued | 2023-01 | - |
dc.identifier.citation | NATURE COMMUNICATIONS, v.14, no.1 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.uri | http://hdl.handle.net/10203/306991 | - |
dc.description.abstract | With the exponential growth of the semiconductor industry, radiation hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 fJ bit (-1), we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 fJ bit(-1). Furthermore, due to its mechanically operating mechanisms and radiation robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit -flip even after 1 Mrad irradiation. | - |
dc.language | English | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000955886200003 | - |
dc.identifier.scopusid | 2-s2.0-85146961031 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | NATURE COMMUNICATIONS | - |
dc.identifier.doi | 10.1038/s41467-023-36076-0 | - |
dc.contributor.localauthor | Yoon, Jun-Bo | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Choi, Pan-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Su-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SOFT | - |
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