DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Lim, Hyeong-Rak | ko |
dc.contributor.author | Jeong, Jaejoong | ko |
dc.contributor.author | Lee, Seung Woo | ko |
dc.contributor.author | Kim, Joon Pyo | ko |
dc.contributor.author | Jeong, Jaeyoung | ko |
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Ahn, Seung-Yeop | ko |
dc.contributor.author | Park, Youngkeun | ko |
dc.contributor.author | Geum, Dae-Myoung | ko |
dc.contributor.author | Kim, Younghyun | ko |
dc.contributor.author | Baek, Yongku | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2023-03-03T05:00:39Z | - |
dc.date.available | 2023-03-03T05:00:39Z | - |
dc.date.created | 2023-02-24 | - |
dc.date.created | 2023-02-24 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.citation | 2022 International Electron Devices Meeting, IEDM 2022, pp.2011 - 2014 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10203/305439 | - |
dc.description.abstract | In this work, we demonstrated 3D sequential complementary field-effect-transistor (CFET) by direct wafer bonding (DWB) technique and a low-temperature process for monolithic 3D(M3D) integration using a high-performance top Ge (110)/<110> channel on bottom Si CMOS. Here, the maximum thermal budget was up to 400°c during the fabrication of top Ge FET, allowing high-performance heterogenous Ge/Si CFET without damage to bottom Si FETs. Furthermore, we systematically investigated the mobility enhancement to channel orientation in thin Ge (110) nanosheet channel pFET. Low effective hole mass along <110> direction on Ge (110), which was calculated by the k cdotp method, provided record high mobility of approximately 400 cm2/V cdot s (corresponds to 743 cm2/V cdot s when normalized by footprint) among the reported Ge pFET with similar channel thicknesses at room temperature. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding | - |
dc.type | Conference | - |
dc.identifier.wosid | 000968800700207 | - |
dc.identifier.scopusid | 2-s2.0-85147525361 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 2011 | - |
dc.citation.endingpage | 2014 | - |
dc.citation.publicationname | 2022 International Electron Devices Meeting, IEDM 2022 | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San Francisco | - |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019551 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Lim, Hyeong-Rak | - |
dc.contributor.nonIdAuthor | Jeong, Jaejoong | - |
dc.contributor.nonIdAuthor | Lee, Seung Woo | - |
dc.contributor.nonIdAuthor | Kim, Joon Pyo | - |
dc.contributor.nonIdAuthor | Jeong, Jaeyoung | - |
dc.contributor.nonIdAuthor | Kim, Bong Ho | - |
dc.contributor.nonIdAuthor | Ahn, Seung-Yeop | - |
dc.contributor.nonIdAuthor | Park, Youngkeun | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myoung | - |
dc.contributor.nonIdAuthor | Kim, Younghyun | - |
dc.contributor.nonIdAuthor | Baek, Yongku | - |
dc.contributor.nonIdAuthor | Cho, Byung Jin | - |
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