DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeo, Youngki | ko |
dc.contributor.author | Hwang, Soo-Yoon | ko |
dc.contributor.author | Yeo, Jinwook | ko |
dc.contributor.author | Kim, Jihun | ko |
dc.contributor.author | Jang, Jinhyuk | ko |
dc.contributor.author | Park, Heung-Sik | ko |
dc.contributor.author | Kim, Yong-Jin | ko |
dc.contributor.author | Le, Duc Duy | ko |
dc.contributor.author | Song, Kyung | ko |
dc.contributor.author | Kim, Moonhong | ko |
dc.contributor.author | Ryu, Seunghwa | ko |
dc.contributor.author | Choi, Si-Young | ko |
dc.contributor.author | Yang, Chan-Ho | ko |
dc.date.accessioned | 2023-02-07T01:01:21Z | - |
dc.date.available | 2023-02-07T01:01:21Z | - |
dc.date.created | 2023-01-28 | - |
dc.date.created | 2023-01-28 | - |
dc.date.issued | 2023-01 | - |
dc.identifier.citation | NANO LETTERS, v.23, no.2, pp.398 - 406 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/305051 | - |
dc.description.abstract | Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO3 thin films grown on DyScO3 substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 104. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n+-n or n-n+ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 x 10-16 cm2/s, which is consistent with oxygen vacancy kinetics. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Configurable Crack Wall Conduction in a Complex Oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000908820200001 | - |
dc.identifier.scopusid | 2-s2.0-85145989683 | - |
dc.type.rims | ART | - |
dc.citation.volume | 23 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 398 | - |
dc.citation.endingpage | 406 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.2c02640 | - |
dc.contributor.localauthor | Ryu, Seunghwa | - |
dc.contributor.localauthor | Yang, Chan-Ho | - |
dc.contributor.nonIdAuthor | Hwang, Soo-Yoon | - |
dc.contributor.nonIdAuthor | Jang, Jinhyuk | - |
dc.contributor.nonIdAuthor | Le, Duc Duy | - |
dc.contributor.nonIdAuthor | Song, Kyung | - |
dc.contributor.nonIdAuthor | Kim, Moonhong | - |
dc.contributor.nonIdAuthor | Choi, Si-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | cracks | - |
dc.subject.keywordAuthor | crack wall conduction | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.subject.keywordAuthor | oxide nanoelectronics | - |
dc.subject.keywordAuthor | SrTiO3 | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE FERROELECTRICITY | - |
dc.subject.keywordPlus | DOMAIN-WALLS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | SRTIO3 | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | GROWTH | - |
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