Thickness Dependence of Interface-Generated Spin Currents in Ferromagnet/Ti/CoFeB Trilayers

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dc.contributor.authorChoi, Gaeunko
dc.contributor.authorRyu, Jeongchunko
dc.contributor.authorLee, Sungjunko
dc.contributor.authorKang, Jaiminko
dc.contributor.authorNoh, Namgyuko
dc.contributor.authorYuk, Jong Minko
dc.contributor.authorPark, Byong-Gukko
dc.date.accessioned2023-01-03T01:00:40Z-
dc.date.available2023-01-03T01:00:40Z-
dc.date.created2022-11-28-
dc.date.created2022-11-28-
dc.date.issued2022-12-
dc.identifier.citationADVANCED MATERIALS INTERFACES, v.9, no.36-
dc.identifier.urihttp://hdl.handle.net/10203/303891-
dc.description.abstractInterface-generated spin currents in ferromagnet (FM)/nonmagnet (NM) structures provide both in-plane and out-of-plane spin-orbit torques (SOTs), enabling the field-free switching of perpendicular magnetization of the other FM layer in magnetic trilayers. In this study, the NM thickness dependence of interface-generated spin currents and associated SOTs in FM/Ti/CoFeB trilayers is investigated. In such magnetic trilayers, it is known that the in-plane SOT results from the spin-orbit filtering of the interface-generated spin current, while the out-of-plane SOT is due to the spin-orbit precession. These results show that the polarity of current-induced magnetization switching under an in-plane magnetic field reverses with increasing Ti thickness. This indicates that the sign of the in-plane SOT depends on the current distribution between the bottom FM and Ti layers. On the other hand, field-free switching occurs only for a Ti thickness of up to approximate to 4 nm, and the same polarity is retained, demonstrating that out-of-plane SOT is governed by the charge current flowing near the interface. These results suggest that field-free switching efficiency can be enhanced by engineering the relative conductance of the FM/NM bilayers to constructively combine in-plane and out-of-plane SOTs caused by interface-generated spin currents.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleThickness Dependence of Interface-Generated Spin Currents in Ferromagnet/Ti/CoFeB Trilayers-
dc.typeArticle-
dc.identifier.wosid000882538500001-
dc.identifier.scopusid2-s2.0-85142046043-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue36-
dc.citation.publicationnameADVANCED MATERIALS INTERFACES-
dc.identifier.doi10.1002/admi.202201317-
dc.contributor.localauthorYuk, Jong Min-
dc.contributor.localauthorPark, Byong-Guk-
dc.contributor.nonIdAuthorChoi, Gaeun-
dc.contributor.nonIdAuthorRyu, Jeongchun-
dc.contributor.nonIdAuthorLee, Sungjun-
dc.contributor.nonIdAuthorNoh, Namgyu-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorfield-free switching-
dc.subject.keywordAuthorinterface-generated spin currents-
dc.subject.keywordAuthorMRAM-
dc.subject.keywordAuthorspin-orbit torque-
dc.subject.keywordAuthorspintronic applications-
dc.subject.keywordPlusORBIT TORQUE-
dc.subject.keywordPlusPERPENDICULAR MAGNETIZATION-
dc.subject.keywordPlusFIELD-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusDRIVEN-
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