METHOD FOR MANUFACTURING A SILICON NITRIDE SINTERED BODY WITH HIGH THERMAL CONDUCTIVITY고 열전도도 질화규소 소결체 및 이의 제조 방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Do Kyung | ko |
| dc.contributor.author | Lee, Hyun Min | ko |
| dc.contributor.author | Seog, In-Sig | ko |
| dc.date.accessioned | 2022-12-27T02:00:47Z | - |
| dc.date.available | 2022-12-27T02:00:47Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/303766 | - |
| dc.description.abstract | The present invention relates to a method for manufacturing a silicon nitride sintered body with high thermal conductivity, which includes the steps of: a) obtaining a slurry by mixing a silicon nitride powder and a non-oxide based sintering aid; b) obtaining a mixed powder by drying the slurry; c) forming a compact by pressurizing the mixed powder; and d) sintering the compact. | - |
| dc.title | METHOD FOR MANUFACTURING A SILICON NITRIDE SINTERED BODY WITH HIGH THERMAL CONDUCTIVITY | - |
| dc.title.alternative | 고 열전도도 질화규소 소결체 및 이의 제조 방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Kim, Do Kyung | - |
| dc.contributor.assignee | KAIST, KCC Corporation | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 16837302.5 | - |
| dc.identifier.patentRegistrationNumber | 3339270 | - |
| dc.date.application | 2016-08-17 | - |
| dc.date.registration | 2020-02-26 | - |
| dc.publisher.country | GE | - |
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