Complementary metal oxide semiconductor image sensor and method for fabricating the sameCMOS 이미지센서 및 이의 제조방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.contributor.author | Kim, Kuk-hwan | ko |
| dc.date.accessioned | 2022-12-26T03:00:44Z | - |
| dc.date.available | 2022-12-26T03:00:44Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/303690 | - |
| dc.description.abstract | Provided are a CMOS image sensor and a method for fabricating the same. The image sensor comprises a light receiving element, and a nanopillar formed at an upper end of the light receiving element. A method for fabricating a CMOS image sensor, the method comprising steps of: inducing a plasma discharge and forming nanodusts in a light receiving region; etching the light receiving region using the nanodusts as a mask; and removing the nanodusts. | - |
| dc.title | Complementary metal oxide semiconductor image sensor and method for fabricating the same | - |
| dc.title.alternative | CMOS 이미지센서 및 이의 제조방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Kim, Kuk-hwan | - |
| dc.contributor.assignee | 한국과학기술원 | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 200610168097.2 | - |
| dc.identifier.patentRegistrationNumber | 001996605 | - |
| dc.date.application | 2006-12-25 | - |
| dc.date.registration | 2010-05-19 | - |
| dc.publisher.country | CC | - |
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.