Role of acoustic phonon transport in near- to asperity-contact heat transfer

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dc.contributor.authorJarzembski, Amunko
dc.contributor.authorTokunaga, Takuroko
dc.contributor.authorCrossley, Jacobko
dc.contributor.authorYun, Jeonghoonko
dc.contributor.authorShaskey, Cedricko
dc.contributor.authorMurdick, Ryan Ako
dc.contributor.authorPark, Inkyuko
dc.contributor.authorFrancoeur, Mathieuko
dc.contributor.authorPark, Keunhanko
dc.date.accessioned2022-12-21T08:00:34Z-
dc.date.available2022-12-21T08:00:34Z-
dc.date.created2022-12-21-
dc.date.created2022-12-21-
dc.date.created2022-12-21-
dc.date.created2022-12-21-
dc.date.issued2022-11-
dc.identifier.citationPHYSICAL REVIEW B, v.106, no.20-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10203/303439-
dc.description.abstractAcoustic phonon transport is revealed as a potential radiation-to-conduction transition mechanism for single-digit nanometer vacuum gaps. To show this, we measure heat transfer from a feedback-controlled platinum nanoheater to a laterally oscillating silicon tip as the tip-nanoheater vacuum gap distance is precisely controlled from a single-digit nanometer down to bulk contact in a high-vacuum shear force microscope. The measured thermal conductance shows a gap dependence of d-5.7±1.1 in the near-contact regime, which is in good agreement with acoustic phonon transport modeling based on the atomistic Green's function framework. The obtained experimental and theoretical results suggest that acoustic phonon transport across a nanoscale vacuum gap can be the dominant heat transfer mechanism in the near- and asperity-contact regimes and can potentially be controlled by an external force stimuli. © 2022 American Physical Society.-
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.titleRole of acoustic phonon transport in near- to asperity-contact heat transfer-
dc.typeArticle-
dc.identifier.wosid000920222400004-
dc.identifier.scopusid2-s2.0-85143719162-
dc.type.rimsART-
dc.citation.volume106-
dc.citation.issue20-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.identifier.doi10.1103/PhysRevB.106.205418-
dc.contributor.localauthorPark, Inkyu-
dc.contributor.nonIdAuthorJarzembski, Amun-
dc.contributor.nonIdAuthorTokunaga, Takuro-
dc.contributor.nonIdAuthorCrossley, Jacob-
dc.contributor.nonIdAuthorShaskey, Cedric-
dc.contributor.nonIdAuthorMurdick, Ryan A-
dc.contributor.nonIdAuthorFrancoeur, Mathieu-
dc.contributor.nonIdAuthorPark, Keunhan-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD THERMAL-RADIATION-
dc.subject.keywordPlusSINGLE-CRYSTAL-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusELECTRIFICATION-
dc.subject.keywordPlusSIMULATION-
dc.subject.keywordPlusCONDUCTION-
dc.subject.keywordPlusCONSTANTS-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusGLASS-
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