Photoresist using dioxaspiro ring-substituted acryl derivatives디옥사스피로 고리 치환 아크릴 유도체를 사용한 포토 레지스트

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Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.
Assignee
KAIST
Country
US (United States)
Application Date
1999-07-30
Application Number
09364860
Registration Date
2000-11-14
Registration Number
06146811
URI
http://hdl.handle.net/10203/303069
Appears in Collection
CH-Patent(특허)
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