Quantum capacitance of vertical tunnel field-effect transistors: A first-principles study

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dc.contributor.authorLee, Ryong Gyuko
dc.contributor.authorKim, Yong-Hoonko
dc.contributor.authorKim, Tae-Hyungko
dc.date.accessioned2022-11-29T07:01:35Z-
dc.date.available2022-11-29T07:01:35Z-
dc.date.created2022-11-28-
dc.date.issued2022-08-23-
dc.identifier.citationPSI-K 2022 CONFERENCE-
dc.identifier.urihttp://hdl.handle.net/10203/301246-
dc.languageEnglish-
dc.publisherTHE PSI-K COMMUNITY-
dc.titleQuantum capacitance of vertical tunnel field-effect transistors: A first-principles study-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnamePSI-K 2022 CONFERENCE-
dc.identifier.conferencecountrySZ-
dc.identifier.conferencelocationSwissTech Convention Center, EPFL-
dc.contributor.localauthorKim, Yong-Hoon-
dc.contributor.nonIdAuthorKim, Tae-Hyung-
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EE-Conference Papers(학술회의논문)
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