Dielectric Engineering for Enhanced Top gate Monolayer MoS2 Transistor Using iCVD-based High-k Dielectric
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Seo Hak | ko |
| dc.contributor.author | Lee, Sanghun | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.date.accessioned | 2022-11-29T05:01:18Z | - |
| dc.date.available | 2022-11-29T05:01:18Z | - |
| dc.date.created | 2022-11-27 | - |
| dc.date.issued | 2022-07-05 | - |
| dc.identifier.citation | Graphene 2022 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/301226 | - |
| dc.language | English | - |
| dc.publisher | Phantoms Foundation | - |
| dc.title | Dielectric Engineering for Enhanced Top gate Monolayer MoS2 Transistor Using iCVD-based High-k Dielectric | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Graphene 2022 | - |
| dc.identifier.conferencecountry | GE | - |
| dc.identifier.conferencelocation | Eurogress Aachen | - |
| dc.contributor.localauthor | Choi, Sung-Yool | - |
| dc.contributor.nonIdAuthor | Park, Seo Hak | - |
| dc.contributor.nonIdAuthor | Lee, Sanghun | - |
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