Doping Engineering through NH3 Plasma Treatment for Threshold Voltage Control of MOCVD-Grown MoS2 Thin-Film Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Mingu | ko |
| dc.contributor.author | Hong, Woonggi | ko |
| dc.contributor.author | Bae, Sanggeun | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.date.accessioned | 2022-11-29T05:01:14Z | - |
| dc.date.available | 2022-11-29T05:01:14Z | - |
| dc.date.created | 2022-11-27 | - |
| dc.date.issued | 2022-07-05 | - |
| dc.identifier.citation | Graphene 2022 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/301225 | - |
| dc.language | English | - |
| dc.publisher | Phantoms Foundation | - |
| dc.title | Doping Engineering through NH3 Plasma Treatment for Threshold Voltage Control of MOCVD-Grown MoS2 Thin-Film Transistor | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Graphene 2022 | - |
| dc.identifier.conferencecountry | GE | - |
| dc.identifier.conferencelocation | Eurogress Aachen | - |
| dc.contributor.localauthor | Choi, Sung-Yool | - |
| dc.contributor.nonIdAuthor | Kang, Mingu | - |
| dc.contributor.nonIdAuthor | Hong, Woonggi | - |
| dc.contributor.nonIdAuthor | Bae, Sanggeun | - |
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