Nitrogen Doping Engineering through NH3 Plasma Treatment for Enhancement Mode MoS2 Thin-Film Transistors

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 99
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorKang, Minguko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2022-11-28T06:03:19Z-
dc.date.available2022-11-28T06:03:19Z-
dc.date.created2022-11-27-
dc.date.issued2022-07-06-
dc.identifier.citationThe 10th International Workshop on 2D Materials-
dc.identifier.urihttp://hdl.handle.net/10203/301126-
dc.languageEnglish-
dc.publisherNational Research Foundation of Korea-
dc.titleNitrogen Doping Engineering through NH3 Plasma Treatment for Enhancement Mode MoS2 Thin-Film Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 10th International Workshop on 2D Materials-
dc.identifier.conferencecountryCC-
dc.identifier.conferencelocationVirtual-
dc.contributor.localauthorChoi, Sung-Yool-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0