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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Hybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding

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dc.contributor.authorKim, Seong Kwangko
dc.contributor.authorLim, Hyeong-Rakko
dc.contributor.authorJeong, Jaejoongko
dc.contributor.authorLee, Seung Wooko
dc.contributor.authorKim, Joon Pyoko
dc.contributor.authorJeong, Jaeyoungko
dc.contributor.authorKim, Bong Hoko
dc.contributor.authorGeum, Dae-Myoungko
dc.contributor.authorKim, Younghyunko
dc.contributor.authorBaek, Yongkuko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorKim, Sanghyeonko
dc.date.accessioned2022-11-24T23:00:12Z-
dc.date.available2022-11-24T23:00:12Z-
dc.date.created2022-11-18-
dc.date.created2022-11-18-
dc.date.issued2022-12-03-
dc.identifier.citation68th IEEE International Electron Devices Meeting, IEDM 2022-
dc.identifier.urihttp://hdl.handle.net/10203/300923-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleHybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname68th IEEE International Electron Devices Meeting, IEDM 2022-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationHilton San Francisco Union Square-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorKim, Seong Kwang-
dc.contributor.nonIdAuthorLim, Hyeong-Rak-
dc.contributor.nonIdAuthorJeong, Jaejoong-
dc.contributor.nonIdAuthorLee, Seung Woo-
dc.contributor.nonIdAuthorKim, Joon Pyo-
dc.contributor.nonIdAuthorJeong, Jaeyoung-
dc.contributor.nonIdAuthorKim, Bong Ho-
dc.contributor.nonIdAuthorGeum, Dae-Myoung-
dc.contributor.nonIdAuthorKim, Younghyun-
dc.contributor.nonIdAuthorBaek, Yongku-
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EE-Conference Papers(학술회의논문)
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