Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays

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Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive-bridging random-access memory for artificial synapses. These devices could allow for dense and efficient storage of analog synapse connections between CMOS neuron circuits. We also discuss challenges and opportunities for analog synaptic devices toward the goal of realizing passive neuromorphic computing arrays. Finally, we focus on reducing spatial and temporal variations, which is critical to experimentally realize powerful and efficient neuromorphic computing systems. (C) 2018 Author(s).
Publisher
AIP Publishing
Issue Date
2018-12
Language
English
Article Type
Article
Citation

APL MATERIALS, v.6, no.12

ISSN
2166-532X
DOI
10.1063/1.5049137
URI
http://hdl.handle.net/10203/300787
Appears in Collection
EE-Journal Papers(저널논문)
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