Channel Mobility Boosting through Ge profile and grain size engineering in a Ge-diffused Poly-Si channel for 3D V-NAND Flash Memory
- Publisher
- 연세대학교, 한국반도체산업협회, 한국반도체연구조합
- Issue Date
- 2022-01-26
- Language
- English
- Citation
제29회 한국반도체학술대회
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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