3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V Operation

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dc.contributor.authorHan, Joon-Kyuko
dc.contributor.authorShim, Jaehoko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorGeum, Dae-Myeongko
dc.contributor.authorKim, Seongkwangko
dc.contributor.authorYu, Ji-Manko
dc.contributor.authorKim, Jongminko
dc.contributor.authorKim, Sanghyeonko
dc.date.accessioned2022-11-11T03:01:12Z-
dc.date.available2022-11-11T03:01:12Z-
dc.date.created2022-10-04-
dc.date.created2022-10-04-
dc.date.issued2021-12-11-
dc.identifier.citationIEEE International Electron Devices Meeting, IEDM 2021, pp.1 - 4-
dc.identifier.issn2380-9248-
dc.identifier.urihttp://hdl.handle.net/10203/299522-
dc.description.abstractA photoresponsive InGaAs biristor neuron suitable for neuromorphic visual systems is demonstrated. It receives optical signals, converts them to electrical signals, and simultaneously transmits spiking signals to a neural network. This feature is attractive for an input neuron in spiking neural networks (SNNs). A visible and infrared (IR) light photoresponse with near 1 V operation was achieved thanks to the narrow bandgap energy of the InGaAs. This permits broadband detection with lower energy consumption and higher speed compared to previous Si-based neurons. Furthermore, monolithic 3D integration (M3D) of photoresponsive neurons over the synapses is available to construct a 3D neuromorphic visual system, which also minimizes the interconnect bottleneck because of its inherently low temperature fabrication.-
dc.languageEnglish-
dc.publisher2021 IEEE International Electron Devices Meeting (IEDM)-
dc.title3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V Operation-
dc.typeConference-
dc.identifier.wosid000812325400155-
dc.identifier.scopusid2-s2.0-85126981530-
dc.type.rimsCONF-
dc.citation.beginningpage1-
dc.citation.endingpage4-
dc.citation.publicationnameIEEE International Electron Devices Meeting, IEDM 2021-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco-
dc.identifier.doi10.1109/IEDM19574.2021.9720654-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorGeum, Dae-Myeong-
dc.contributor.nonIdAuthorKim, Jongmin-
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