DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yeonkyung | ko |
dc.contributor.author | Jeong, Byeong Guk | ko |
dc.contributor.author | Roh, Heebum | ko |
dc.contributor.author | Roh, Jeongkyun | ko |
dc.contributor.author | Han, Jongseok | ko |
dc.contributor.author | Lee, Doh Chang | ko |
dc.contributor.author | Bae, Wan Ki | ko |
dc.contributor.author | Kim, Jae-Yup | ko |
dc.contributor.author | Lee, Changhee | ko |
dc.date.accessioned | 2022-11-10T07:01:02Z | - |
dc.date.available | 2022-11-10T07:01:02Z | - |
dc.date.created | 2022-11-10 | - |
dc.date.created | 2022-11-10 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | ADVANCED QUANTUM TECHNOLOGIES, v.1, no.1 | - |
dc.identifier.issn | 2511-9044 | - |
dc.identifier.uri | http://hdl.handle.net/10203/299489 | - |
dc.description.abstract | Charge balance between electrons and holes, which are injected into the quantum dot (QD) emission layer (EML), is critical for realizing stable and efficient QD light-emitting diodes (QLEDs). ZnO has been widely used as an electron-transport layer (ETL) because of its superior performance compared to other metal oxides. However, nearly barrier-free electron injection into the QD EML leads to spontaneous charge transfer and excess electron injection, resulting in reduced device performance. Here, to adjust electron-hole balance and thereby improve the lifetime and efficiency of QLEDs, we introduce an yttrium (Y)-doped ZnO (YZO) ETL into QLEDs. The sol-gel processed YZO film, with a mobility that could be simply tuned by varying the Y concentration, provides enhanced charge-transport balance by suppressing excess electron flow to the QD EML. Furthermore, YZO helps suppress QD charging and smooth the surface morphology. Applying the YZO ETL into the inverted-structure QLED enables us to achieve color-saturated red emission, an improved external quantum efficiency of up to 8.6%, and an eight times longer lifetime compared to the device with undoped ZnO. This result provides a simple method for enhancing the performance of QLEDs by easily controlling metal doping concentration in the sol-gel processed ZnO ETL. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Enhanced Lifetime and Efficiency of Red Quantum Dot Light-Emitting Diodes with Y-Doped ZnO Sol-Gel Electron-Transport Layers by Reducing Excess Electron Injection | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-85106546054 | - |
dc.type.rims | ART | - |
dc.citation.volume | 1 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | ADVANCED QUANTUM TECHNOLOGIES | - |
dc.identifier.doi | 10.1002/qute.201700006 | - |
dc.contributor.localauthor | Lee, Doh Chang | - |
dc.contributor.nonIdAuthor | Lee, Yeonkyung | - |
dc.contributor.nonIdAuthor | Roh, Heebum | - |
dc.contributor.nonIdAuthor | Roh, Jeongkyun | - |
dc.contributor.nonIdAuthor | Han, Jongseok | - |
dc.contributor.nonIdAuthor | Bae, Wan Ki | - |
dc.contributor.nonIdAuthor | Kim, Jae-Yup | - |
dc.contributor.nonIdAuthor | Lee, Changhee | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | charge balance | - |
dc.subject.keywordAuthor | electron-transport layer | - |
dc.subject.keywordAuthor | operating stability | - |
dc.subject.keywordAuthor | quantum dot light-emitting diodes (QLEDs) | - |
dc.subject.keywordAuthor | Y-doped ZnO | - |
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