Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Do Hyung | ko |
| dc.contributor.author | Lee, Kwang-Heum | ko |
| dc.contributor.author | Lee, Seung Hee | ko |
| dc.contributor.author | Kim, Junsung | ko |
| dc.contributor.author | Yang, Junghoon | ko |
| dc.contributor.author | Kim, Jingyu | ko |
| dc.contributor.author | Cho, Seong-In | ko |
| dc.contributor.author | Ji, Kwang Hwan | ko |
| dc.contributor.author | Hwang, Chi-Sun | ko |
| dc.contributor.author | Park, Sang-Hee Ko | ko |
| dc.date.accessioned | 2022-11-02T07:01:06Z | - |
| dc.date.available | 2022-11-02T07:01:06Z | - |
| dc.date.created | 2022-11-01 | - |
| dc.date.created | 2022-11-01 | - |
| dc.date.created | 2022-11-01 | - |
| dc.date.issued | 2022-10 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.43, no.10, pp.1677 - 1680 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/299271 | - |
| dc.description.abstract | This letter presents a thin-film transistor architecture, in which a "trench" is introduced between the source and drain electrode to enhance current flow. The top-gate top-contact oxide Trench thin-film transistor has a superior on-current per width of 27.7 mu A/mu m at a drain voltage of 4.1 V. It also has a good subthreshold swing of 0.122 V/dec and turn-on voltage of 0.4 V. This study explores the operating mechanism of the high-current driving Trench oxide thin-film transistor. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000861441600025 | - |
| dc.identifier.scopusid | 2-s2.0-85137891746 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 43 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 1677 | - |
| dc.citation.endingpage | 1680 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2022.3201072 | - |
| dc.contributor.localauthor | Park, Sang-Hee Ko | - |
| dc.contributor.nonIdAuthor | Kim, Junsung | - |
| dc.contributor.nonIdAuthor | Ji, Kwang Hwan | - |
| dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Aluminum-doped indium tin zinc oxide | - |
| dc.subject.keywordAuthor | on-current boosting effect | - |
| dc.subject.keywordAuthor | oxide semiconductor | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.subject.keywordAuthor | trench structure | - |
| dc.subject.keywordPlus | DAMAGE | - |
| dc.subject.keywordPlus | TOP | - |
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