Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square-Tensile-Strain

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dc.contributor.authorLee, Jun Hanko
dc.contributor.authorNguyen Xuan Duongko
dc.contributor.authorJung, Min-Hyoungko
dc.contributor.authorLee, Hyun-Jaeko
dc.contributor.authorKim, Ahyoungko
dc.contributor.authorYeo, Youngkiko
dc.contributor.authorKim, Junhyungko
dc.contributor.authorKim, Gye-Hyeonko
dc.contributor.authorCho, Byeong-Gwanko
dc.contributor.authorKim, Jaegyuko
dc.contributor.authorNaqvi, Furqan Ul Hassanko
dc.contributor.authorBae, Jong-Seongko
dc.contributor.authorKim, Jeehoonko
dc.contributor.authorAhn, Chang Wonko
dc.contributor.authorKim, Young-Minko
dc.contributor.authorSong, Tae Kwonko
dc.contributor.authorKo, Jae-Hyeonko
dc.contributor.authorKoo, Tae-Yeongko
dc.contributor.authorSohn, Changheeko
dc.contributor.authorPark, Kibogko
dc.contributor.authorYang, Chan-Hoko
dc.contributor.authorYang, Sang Moko
dc.contributor.authorLee, Jun Heeko
dc.contributor.authorJeong, Hu Youngko
dc.contributor.authorKim, Tae Heonko
dc.contributor.authorOh, Yoon Seokko
dc.date.accessioned2022-10-27T01:01:32Z-
dc.date.available2022-10-27T01:01:32Z-
dc.date.created2022-09-27-
dc.date.created2022-09-27-
dc.date.created2022-09-27-
dc.date.issued2022-10-
dc.identifier.citationADVANCED MATERIALS, v.34, no.42-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/299139-
dc.description.abstractInteraction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO3 is reported, which boosts the square-tensile-strain to BaTiO3 and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti3+ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, it is experimentally demonstrated that three electrically controlled polar-ordering states lead to switchable and nonvolatile dielectric states for application of nondestructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleReversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square-Tensile-Strain-
dc.typeArticle-
dc.identifier.wosid000853912400001-
dc.identifier.scopusid2-s2.0-85137977280-
dc.type.rimsART-
dc.citation.volume34-
dc.citation.issue42-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.202205825-
dc.contributor.localauthorYang, Chan-Ho-
dc.contributor.nonIdAuthorLee, Jun Han-
dc.contributor.nonIdAuthorNguyen Xuan Duong-
dc.contributor.nonIdAuthorJung, Min-Hyoung-
dc.contributor.nonIdAuthorLee, Hyun-Jae-
dc.contributor.nonIdAuthorKim, Ahyoung-
dc.contributor.nonIdAuthorKim, Junhyung-
dc.contributor.nonIdAuthorKim, Gye-Hyeon-
dc.contributor.nonIdAuthorCho, Byeong-Gwan-
dc.contributor.nonIdAuthorKim, Jaegyu-
dc.contributor.nonIdAuthorNaqvi, Furqan Ul Hassan-
dc.contributor.nonIdAuthorBae, Jong-Seong-
dc.contributor.nonIdAuthorKim, Jeehoon-
dc.contributor.nonIdAuthorAhn, Chang Won-
dc.contributor.nonIdAuthorKim, Young-Min-
dc.contributor.nonIdAuthorSong, Tae Kwon-
dc.contributor.nonIdAuthorKo, Jae-Hyeon-
dc.contributor.nonIdAuthorKoo, Tae-Yeong-
dc.contributor.nonIdAuthorSohn, Changhee-
dc.contributor.nonIdAuthorPark, Kibog-
dc.contributor.nonIdAuthorYang, Sang Mo-
dc.contributor.nonIdAuthorLee, Jun Hee-
dc.contributor.nonIdAuthorJeong, Hu Young-
dc.contributor.nonIdAuthorKim, Tae Heon-
dc.contributor.nonIdAuthorOh, Yoon Seok-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBaZrO-
dc.subject.keywordAuthor(3)-
dc.subject.keywordAuthordefect-dipoles-
dc.subject.keywordAuthorferroelectrics-
dc.subject.keywordAuthorfour-variants ferroelectric domains-
dc.subject.keywordAuthorin-plane ferroelectrics-
dc.subject.keywordAuthornew perovskite substrates-
dc.subject.keywordAuthorswitchable ferroelectric bias-
dc.subject.keywordAuthorternary polar states-
dc.subject.keywordPlusPB(ZR,TI)O-3 THIN-FILM-
dc.subject.keywordPlusBATIO3-
dc.subject.keywordPlusVOLTAGES-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordPlusIMPRINT-
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