DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Ji-Man | ko |
dc.contributor.author | Wang, Dong-Hyun | ko |
dc.contributor.author | Ku, Ja-Yun | ko |
dc.contributor.author | Han, Joon-Kyu | ko |
dc.contributor.author | Jung, Dae-Han | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2022-08-18T09:00:11Z | - |
dc.date.available | 2022-08-18T09:00:11Z | - |
dc.date.created | 2022-07-19 | - |
dc.date.created | 2022-07-19 | - |
dc.date.created | 2022-07-19 | - |
dc.date.issued | 2022-11 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.197 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/298017 | - |
dc.description.abstract | Low-temperature deuterium (D2) annealing (LTDA) is applied to improve performances and reliability of a MOSFET. The LTDA is performed at 300 °C, which is at least 100 °C lower than the widely used temperature of forming gas annealing (FGA) with H2, which contributes to reducing a thermal budget especially in the backend-of-the-line (BEOL). DC performances, such as subthreshold slope (SS), threshold voltage (VTH), and on-current (ION) were statistically compared in cases with and without the LTDA to evaluate their improvements. Profiling of D2 by secondary ion mass spectrometry (SIMS) supports that D2 can permeate a gate oxide and passivate dangling bonds and traps near the interface of the SiO2-Si channel. Therefore ION, SS, and VTH were improved, gate leakage current (IG) was reduced, and immunity to positive bias stress (PBS) became better. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET | - |
dc.type | Article | - |
dc.identifier.wosid | 000838159000001 | - |
dc.identifier.scopusid | 2-s2.0-85135343919 | - |
dc.type.rims | ART | - |
dc.citation.volume | 197 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2022.108421 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Wang, Dong-Hyun | - |
dc.contributor.nonIdAuthor | Ku, Ja-Yun | - |
dc.contributor.nonIdAuthor | Jung, Dae-Han | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Deuterium annealing | - |
dc.subject.keywordAuthor | Forming gas annealing | - |
dc.subject.keywordAuthor | Trap | - |
dc.subject.keywordAuthor | Reliability | - |
dc.subject.keywordPlus | HOT-CARRIER RELIABILITY | - |
dc.subject.keywordPlus | LOW THERMAL BUDGET | - |
dc.subject.keywordPlus | QUANTITATIVE-ANALYSIS | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | DESORPTION | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | HFO2 | - |
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