Method of Forming Fine Patterns By Using Block Copolymer블록 공중합체를 이용한 미세 패턴의 형성 방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정연식 | ko |
| dc.contributor.author | 허윤형 | ko |
| dc.contributor.author | 송승원 | ko |
| dc.date.accessioned | 2022-08-16T05:01:20Z | - |
| dc.date.available | 2022-08-16T05:01:20Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/297961 | - |
| dc.description.abstract | Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is the block copolymer comprising a first block having a repeating unit represented by a following chemical formula 1, and a second block having a repeating unit represented by a following chemical formula 2, wherein R1-R5, X1-X5, 1, n and m are as defined by claim 1. | - |
| dc.title | Method of Forming Fine Patterns By Using Block Copolymer | - |
| dc.title.alternative | 블록 공중합체를 이용한 미세 패턴의 형성 방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 정연식 | - |
| dc.contributor.assignee | KAIST, SK Innovation Co., Ltd. | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 201710869088.4 | - |
| dc.identifier.patentRegistrationNumber | 107868194 | - |
| dc.date.application | 2017-09-22 | - |
| dc.date.registration | 2022-04-05 | - |
| dc.publisher.country | CC | - |
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