DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Kyung Min | - |
dc.contributor.advisor | 김경민 | - |
dc.contributor.author | Son, Seoil | - |
dc.date.accessioned | 2022-04-21T19:31:53Z | - |
dc.date.available | 2022-04-21T19:31:53Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=949134&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/295417 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2021.2,[ix, 64 p. :] | - |
dc.description.abstract | We developed a Pt/TaO$_x$/NbO$_x$/AlO$_x$/Ti memristor that shows both the ~10$^5$ of high self-rectifying ratio and ~10$^3$ of non-linear characteristics at below 1uA of programming current, which are desired for the high density and low power memristive crossbar applications. The device showed a continuous and uniform analog switching behavior, which makes it suitable for multi-bit memory or neuromorphic applications. Its retention and endurance characteristics are exceeding 2ⅹ10$^5$ seconds at 150℃ and >10$^5$ cycles, respectively. We propose an in-depth understanding on the switching mechanism based on the experiments and physical analysis. In addition, we demonstrate the optimized array-level methodology to maximize the characteristic of the memristor in the neuromorphic computing. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Memristors▼aSelf-rectifying▼aNon-linear▼aLow power▼aCharge trap/detrap▼aSynaptic plasticity▼aMemristive neural network | - |
dc.subject | 멤리스터▼a자가 정류▼a비 선형성▼a저 전력▼a차지 트랩/디트랩▼a시냅스 소자▼a멤리스터 기반 인공신경망 | - |
dc.title | Study on NbOx-based non-linear and self-rectifying analog charge trap memristor for a high density crossbar application | - |
dc.title.alternative | 고집적 크로스바 어레이 적용을 위한 NbOx 기반 비선형성, 자가정류 특성의 아날로그 전하 트랩 멤리스터 소자에 대한 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 손서일 | - |
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