DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Shim, Gi Woong | ko |
dc.date.accessioned | 2022-04-15T07:03:49Z | - |
dc.date.available | 2022-04-15T07:03:49Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/294831 | - |
dc.description.abstract | The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film. | - |
dc.title | METHOD FOR MANUFACTURING TRANSITION METAL CHALCOGENIDE AND TRANSITION METAL CHALCOGENIDE PREPARED THEREBY | - |
dc.title.alternative | 전이금속 칼코게나이드 제조방법 및 이에 의하여 제조된 전이금속 칼코게나이드 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Hong, Woonggi | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16925674 | - |
dc.identifier.patentRegistrationNumber | 11268210 | - |
dc.date.application | 2020-07-10 | - |
dc.date.registration | 2022-03-08 | - |
dc.publisher.country | US | - |
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