CMOS RF power amplifier with reconfigurable transformer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Y | ko |
| dc.contributor.author | Park, C | ko |
| dc.contributor.author | Kim, H | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.date.accessioned | 2008-01-28T05:41:59Z | - |
| dc.date.available | 2008-01-28T05:41:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2006-03 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.42, no.7, pp.405 - 407 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/2940 | - |
| dc.description.abstract | A CMOS RF power amplifier that can Change the Output transformer ratio is presented. The CMOS power amplifier is fully integrated in a 0.13 mu m process and has a power added efficiency (PAE) of 38% at 2.1 GHz and an Output power of 30.7 dBm with 3.0 V supply voltage. The PAE at an output power of 16 dBm was increased by 40% by altering the transformer ratio. | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | CMOS RF power amplifier with reconfigurable transformer | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000237556100019 | - |
| dc.identifier.scopusid | 2-s2.0-33750213681 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 42 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 405 | - |
| dc.citation.endingpage | 407 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Kim, Y | - |
| dc.contributor.nonIdAuthor | Park, C | - |
| dc.contributor.nonIdAuthor | Kim, H | - |
| dc.type.journalArticle | Article | - |
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