Semiconductor device and semiconductor logic device반도체 소자 및 반도체 로직 소자
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Byong-Guk | ko |
| dc.contributor.author | Baek, Seung Heon | ko |
| dc.contributor.author | Park, Kyung Woong | ko |
| dc.date.accessioned | 2022-01-25T06:41:17Z | - |
| dc.date.available | 2022-01-25T06:41:17Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/292030 | - |
| dc.description.abstract | The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell. | - |
| dc.title | Semiconductor device and semiconductor logic device | - |
| dc.title.alternative | 반도체 소자 및 반도체 로직 소자 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Park, Byong-Guk | - |
| dc.contributor.nonIdAuthor | Park, Kyung Woong | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 17091103 | - |
| dc.identifier.patentRegistrationNumber | 11205466 | - |
| dc.date.application | 2020-11-06 | - |
| dc.date.registration | 2021-12-21 | - |
| dc.publisher.country | US | - |
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