Method of forming fine pattern using a block copolymer블록 공중합체를 이용한 미세 패턴의 형성 방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정연식 | ko |
| dc.contributor.author | 허윤형 | ko |
| dc.contributor.author | 송승원 | ko |
| dc.date.accessioned | 2021-12-16T06:54:29Z | - |
| dc.date.available | 2021-12-16T06:54:29Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/290733 | - |
| dc.description.abstract | Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: [Image] [Chemical Formula 2] [Image] wherein R1 to R5, X1 to X5, l, n and m are as defined in claim 1. | - |
| dc.title | Method of forming fine pattern using a block copolymer | - |
| dc.title.alternative | 블록 공중합체를 이용한 미세 패턴의 형성 방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 정연식 | - |
| dc.contributor.assignee | KAIST, SK INNOVATION CO LTD | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 106132676 | - |
| dc.identifier.patentRegistrationNumber | I735661 | - |
| dc.date.application | 2017-09-22 | - |
| dc.date.registration | 2021-08-11 | - |
| dc.publisher.country | CH | - |
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