Dynamic-Capacitance Characteristics of RTD-pair Configuration for Improved Frequency and Output-Power Potential
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, KiWon | ko |
| dc.contributor.author | Yang, KyoungHoon | ko |
| dc.date.accessioned | 2021-11-24T06:44:07Z | - |
| dc.date.available | 2021-11-24T06:44:07Z | - |
| dc.date.created | 2021-11-23 | - |
| dc.date.issued | 2021-05-11 | - |
| dc.identifier.citation | Compound Semiconductor Week 2021(CSW2021) | - |
| dc.identifier.uri | http://hdl.handle.net/10203/289446 | - |
| dc.description.abstract | Abstract—In this work, a resonant tunneling diode (RTD)-pair configuration has been studied by analyzing the dynamic capacitance characteristics of the RTD for improved high-frequency and output-power performances. The analyses indicate that not only the output power can be significantly improved at an optimum bias voltage of the RTD-pair configuration, but also it operates at a much smaller dynamic capacitance region, making the RTD-pair configuration beneficial for high frequency and high output power operation. | - |
| dc.language | English | - |
| dc.publisher | Compound Semiconductor Week | - |
| dc.title | Dynamic-Capacitance Characteristics of RTD-pair Configuration for Improved Frequency and Output-Power Potential | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Compound Semiconductor Week 2021(CSW2021) | - |
| dc.identifier.conferencecountry | SW | - |
| dc.identifier.conferencelocation | Online | - |
| dc.contributor.localauthor | Yang, KyoungHoon | - |
| dc.contributor.nonIdAuthor | Lee, KiWon | - |
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