Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices

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Ultrathin film-based transparent conductive oxides (TCOs) with a broad work function (WF) tunability are highly demanded for efficient energy conversion devices. However, reducing the film thickness below 50 nm is limited due to rapidly increasing resistance; furthermore, introducing dopants into TCOs such as indium tin oxide (ITO) to reduce the resistance decreases the transparency due to a trade-off between the two quantities. Herein, we demonstrate dopant-tunable ultrathin (<= 50 nm) TCOs fabricated via electric field-driven metal implantation (m-TCOs; m = Ni, Ag, and Cu) without compromising their innate electrical and optical properties. The m-TCOs exhibit a broad WF variation (0.97 eV), high transmittance in the UV to visible range (89-93% at 365 nm), and low sheet resistance (30-60 Omega cm(-2)). Experimental and theoretical analyses show that interstitial metal atoms mainly affect the change in the WF without substantial losses in optical transparency. The m-ITOs are employed as anode or cathode electrodes for organic light-emitting diodes (LEDs), inorganic UV LEDs, and organic photovoltaics for their universal use, leading to outstanding performances, even without hole injection layer for OLED through the WF-tailored Ni-ITO. These results verify the proposed m-TCOs enable effective carrier transport and light extraction beyond the limits of traditional TCOs.
Publisher
SHANGHAI JIAO TONG UNIV PRESS
Issue Date
2021-12
Language
English
Article Type
Article
Citation

NANO-MICRO LETTERS, v.13, no.1, pp.211 - 211

ISSN
2311-6706
DOI
10.1007/s40820-021-00735-y
URI
http://hdl.handle.net/10203/288500
Appears in Collection
PH-Journal Papers(저널논문)
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