DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Jeong, Woo Jin | ko |
dc.contributor.author | Lee, Jaehyun | ko |
dc.date.accessioned | 2021-10-14T05:50:37Z | - |
dc.date.available | 2021-10-14T05:50:37Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/288181 | - |
dc.description.abstract | Disclosed is a method for simulating characteristics of a semiconductor device. An overlap matrix and a Hamiltonian representing atomic interaction energy information of a target semiconductor device are extracted by using a density functional theory (DFT), and Bloch states for corresponding energies are calculated based on the Hamiltonian, the overlap matrix, and energy-k relation within an effective energy region. A first reduced Hamiltonian and a first reduced overlap matrix having a reduced matrix size are obtained by applying the Hamiltonian and the overlap matrix to a transformation matrix that is obtained by orthonormalizing a matrix representing the Bloch states. A final transformation matrix and a final energy band structure where all unphysical branches, which are energy bands not corresponding to a first energy band structure in a second energy band structure, are removed within the effective energy region are calculated. | - |
dc.title | Method for simulating characteristics of semiconductor device | - |
dc.title.alternative | 반도체 장치의 simulating 특성을 위한 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Jeong, Woo Jin | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 15949268 | - |
dc.identifier.patentRegistrationNumber | 11010524 | - |
dc.date.application | 2018-04-10 | - |
dc.date.registration | 2021-05-18 | - |
dc.publisher.country | US | - |
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