DC Field | Value | Language |
---|---|---|
dc.contributor.author | Samanta, Shibnath | ko |
dc.contributor.author | Anoop, Gopinathan | ko |
dc.contributor.author | Joh, HyunJin | ko |
dc.contributor.author | Seol, WooJun | ko |
dc.contributor.author | Park, Seong Min | ko |
dc.contributor.author | Unithrattil, Sanjith | ko |
dc.contributor.author | Lee, Jun Young | ko |
dc.contributor.author | Kim, Tae Yeon | ko |
dc.contributor.author | Kim, Hoon | ko |
dc.contributor.author | Yeom, Jiwon | ko |
dc.contributor.author | Hong, Seungbum | ko |
dc.contributor.author | Jo, Ji Young | ko |
dc.date.accessioned | 2021-10-05T07:10:18Z | - |
dc.date.available | 2021-10-05T07:10:18Z | - |
dc.date.created | 2021-09-08 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.citation | ADVANCED MATERIALS INTERFACES, v.8, no.18, pp.2100907 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | http://hdl.handle.net/10203/288019 | - |
dc.description.abstract | Ferroelectricity in HfO2 thin films can be utilized for fast, power-efficient, and highly scalable non-volatile memories. However, the required wake-up process for inducing ferroelectricity/ achieving higher polarization is one of the major hurdles that hinder HfO2-based thin films from developing reliable electronic devices. The wake-up effect is believed to originate from i) phase transformation from non-ferroelectric to ferroelectric, ii) movement of defect entities (mainly oxygen vacancy defects) near the film-electrode interface, and iii) heterogeneity of the electrode interfaces. In the present study, an experimental strategy is designed to overcome these sources of the wake-up process. A multi-step deposition and annealing process is carried out to induce wake-up-free ferroelectricity in Yttrium doped HfO2 (Y:HfO2) thin film directly grown on Si-substrate. Furnace annealing is utilized instead of the standard rapid thermal annealing process to reduce the oxygen deficiencies and stimulate the direct growth of the polar Y:HfO2. The oxygen-vacancy-related defects are found to be the dominating source of wake-up effect in Y-doped HfO2 films. The step-wise deposition and annealing in the oxygen atmosphere facilitate direct growth of the polar phase, reduce the oxygen vacancies, and induce wake-up-free ferroelectricity in Y:HfO2. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Multi-Step Chemical Solution Deposition-Annealing Process Toward Wake-Up Free Ferroelectricity in Y:HfO2 Films | - |
dc.type | Article | - |
dc.identifier.wosid | 000690663200001 | - |
dc.identifier.scopusid | 2-s2.0-85113632094 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 18 | - |
dc.citation.beginningpage | 2100907 | - |
dc.citation.publicationname | ADVANCED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1002/admi.202100907 | - |
dc.contributor.localauthor | Hong, Seungbum | - |
dc.contributor.nonIdAuthor | Samanta, Shibnath | - |
dc.contributor.nonIdAuthor | Anoop, Gopinathan | - |
dc.contributor.nonIdAuthor | Joh, HyunJin | - |
dc.contributor.nonIdAuthor | Seol, WooJun | - |
dc.contributor.nonIdAuthor | Park, Seong Min | - |
dc.contributor.nonIdAuthor | Unithrattil, Sanjith | - |
dc.contributor.nonIdAuthor | Lee, Jun Young | - |
dc.contributor.nonIdAuthor | Kim, Tae Yeon | - |
dc.contributor.nonIdAuthor | Jo, Ji Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | chemical solution deposition | - |
dc.subject.keywordAuthor | ferroelectricity | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | wake-up effect | - |
dc.subject.keywordPlus | HFO2 THIN-FILMS | - |
dc.subject.keywordPlus | HAFNIUM OXIDE-FILMS | - |
dc.subject.keywordPlus | LAYER | - |
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