DC Field | Value | Language |
---|---|---|
dc.contributor.author | Poddubny, A.N. | ko |
dc.contributor.author | Moskalenko, Andrey | ko |
dc.contributor.author | Prokofiev, A.A. | ko |
dc.contributor.author | Goupalov, S.V. | ko |
dc.contributor.author | Yassievich, I.N. | ko |
dc.date.accessioned | 2021-08-30T08:50:09Z | - |
dc.date.available | 2021-08-30T08:50:09Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.8, no.3, pp.985 - 990 | - |
dc.identifier.issn | 1610-1642 | - |
dc.identifier.uri | http://hdl.handle.net/10203/287501 | - |
dc.description.abstract | Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108 s-1 to 10-12 s-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-79952635235 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 985 | - |
dc.citation.endingpage | 990 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS | - |
dc.identifier.doi | 10.1002/pssc.201000407 | - |
dc.contributor.localauthor | Moskalenko, Andrey | - |
dc.contributor.nonIdAuthor | Poddubny, A.N. | - |
dc.contributor.nonIdAuthor | Prokofiev, A.A. | - |
dc.contributor.nonIdAuthor | Goupalov, S.V. | - |
dc.contributor.nonIdAuthor | Yassievich, I.N. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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