DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Junseok | ko |
dc.contributor.author | Jin, Dae Kwon | ko |
dc.contributor.author | Choi, Joonghoon | ko |
dc.contributor.author | Jang, Junho | ko |
dc.contributor.author | Kang, Bong Kyun | ko |
dc.contributor.author | Wang, Qingxiao | ko |
dc.contributor.author | Park, Won Il | ko |
dc.contributor.author | Jeong, Mun Seok | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.contributor.author | Yang, Woo Seok | ko |
dc.contributor.author | Kim, Moon J. | ko |
dc.contributor.author | Hong, Young Joon | ko |
dc.date.accessioned | 2021-07-29T02:10:05Z | - |
dc.date.available | 2021-07-29T02:10:05Z | - |
dc.date.created | 2021-07-29 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.citation | NANO ENERGY, v.86 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/286891 | - |
dc.description.abstract | The remote epitaxy of GaN p-n homojunction microcrystals (mu Cs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p-n junction mu Cs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The mu Cs-LED shows electrical rectification and white electroluminescence (EL) emission. The mu Cs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the mu Cs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow-red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.title | Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000672567200004 | - |
dc.identifier.scopusid | 2-s2.0-85105566609 | - |
dc.type.rims | ART | - |
dc.citation.volume | 86 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2021.106075 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.nonIdAuthor | Jeong, Junseok | - |
dc.contributor.nonIdAuthor | Jin, Dae Kwon | - |
dc.contributor.nonIdAuthor | Choi, Joonghoon | - |
dc.contributor.nonIdAuthor | Kang, Bong Kyun | - |
dc.contributor.nonIdAuthor | Wang, Qingxiao | - |
dc.contributor.nonIdAuthor | Park, Won Il | - |
dc.contributor.nonIdAuthor | Jeong, Mun Seok | - |
dc.contributor.nonIdAuthor | Yang, Woo Seok | - |
dc.contributor.nonIdAuthor | Kim, Moon J. | - |
dc.contributor.nonIdAuthor | Hong, Young Joon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Remote epitaxy | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | p-n junction | - |
dc.subject.keywordAuthor | White light emitting diode | - |
dc.subject.keywordAuthor | Flexible device | - |
dc.subject.keywordAuthor | Transfer | - |
dc.subject.keywordPlus | HETEROGENEOUS INTEGRATION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordPlus | GROWTH | - |
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