Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors

Cited 8 time in webofscience Cited 0 time in scopus
  • Hit : 197
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorShim, Joonsupko
dc.contributor.authorLim, Jinhako
dc.contributor.authorGeum, Dae-Myeongko
dc.contributor.authorKim, Bong Hoko
dc.contributor.authorAhn, Seung-Yeopko
dc.contributor.authorKim, SangHyeonko
dc.date.accessioned2021-07-06T02:50:21Z-
dc.date.available2021-07-06T02:50:21Z-
dc.date.created2021-07-05-
dc.date.created2021-07-05-
dc.date.created2021-07-05-
dc.date.issued2021-06-
dc.identifier.citationOPTICS EXPRESS, v.29, no.12, pp.18037 - 18058-
dc.identifier.issn1094-4087-
dc.identifier.urihttp://hdl.handle.net/10203/286417-
dc.description.abstractIn this paper, we systematically investigated tailoring bolometric properties of a proposed heat-sensitive TiOx/Ti/TiOx tri-layer film for a waveguide-based bolometer, which can play a significant role as an on-chip detector operating in the mid-infrared wavelength range for the integrated optical gas sensors on Ge-on-insulator (Ge-OI) platform. As a proof-of-concept, bolometric test devices with a TiOx single-layer and TiOx/Ti/TiOx tri-layer films were fabricated by varying the layer thickness and thermal treatment condition. Comprehensive characterization was examined by the scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses in the prepared films to fully understand the microstructure and interfacial properties and the effects of thermal treatment. Quantitative measurements of the temperature- and time-dependent resistance variations were conducted to deduce the minimum detectable change in temperature (Delta T-min) of the prepared films. Furthermore, based on these experimentally obtained results, limit-of-detection (LoD) for the carbon dioxide gas sensing was estimated to demonstrate the feasibility of the proposed waveguide-based bolometer with the TiOx/Ti/TiOx tri-layer film as an on-chip detector on the Ge-OI platform. It was found that the LoD can reach similar to 3.25 ppm and/or even lower with the Delta T-min of 11.64 mK in the device with the TiOx/Ti/TiOx (47/6/47 nm) tri-layer film vacuum-annealed at 400 degrees C for 15 min, which shows great enhancement of similar to 7.7 times lower value compared to the best case of TiOx single-layer films. Our theoretical and experimental demonstration for tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film provides fairly useful insight on how to improve LoD in the integrated optical gas sensor with the bolometer as an on-chip detector. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement-
dc.languageEnglish-
dc.publisherOPTICAL SOC AMER-
dc.titleTailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors-
dc.typeArticle-
dc.identifier.wosid000659223100027-
dc.identifier.scopusid2-s2.0-85106553465-
dc.type.rimsART-
dc.citation.volume29-
dc.citation.issue12-
dc.citation.beginningpage18037-
dc.citation.endingpage18058-
dc.citation.publicationnameOPTICS EXPRESS-
dc.identifier.doi10.1364/OE.427147-
dc.contributor.localauthorKim, SangHyeon-
dc.contributor.nonIdAuthorGeum, Dae-Myeong-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusWAVE-GUIDE PLATFORM-
dc.subject.keywordPlusMIDINFRARED PHOTONICS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusGERMANIUM-
dc.subject.keywordPlusMICROBOLOMETER-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 8 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0