Interfacial trap effects in InAs gate-all-around nanowire tunnel field-effect transistors: first-principles-based approach
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LEE, HYEONGU | ko |
| dc.contributor.author | Shin, Mincheol | ko |
| dc.contributor.author | Yucheol Cho | ko |
| dc.contributor.author | Jeon, Seong Hyeok | ko |
| dc.date.accessioned | 2021-07-01T05:30:29Z | - |
| dc.date.available | 2021-07-01T05:30:29Z | - |
| dc.date.created | 2021-06-21 | - |
| dc.date.issued | 2021-05 | - |
| dc.identifier.citation | IWCN2021 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/286337 | - |
| dc.language | English | - |
| dc.publisher | IWCN2021 | - |
| dc.title | Interfacial trap effects in InAs gate-all-around nanowire tunnel field-effect transistors: first-principles-based approach | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | IWCN2021 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Online | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Yucheol Cho | - |
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