DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Minsoo | ko |
dc.contributor.author | Chai, Hyun-Jun | ko |
dc.contributor.author | Jeong, Han Beom | ko |
dc.contributor.author | Park, Cheolmin | ko |
dc.contributor.author | Jung, In-young | ko |
dc.contributor.author | Park, Eunpyo | ko |
dc.contributor.author | Çiçek, Mert Miraç | ko |
dc.contributor.author | Lee, Injun | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.contributor.author | Durgun, Engin | ko |
dc.contributor.author | Kwak, Joon Young | ko |
dc.contributor.author | Song, Seungwoo | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Jeong, Hu Young | ko |
dc.contributor.author | Kang, Kibum | ko |
dc.date.accessioned | 2021-06-21T05:10:10Z | - |
dc.date.available | 2021-06-21T05:10:10Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.citation | ACS NANO, v.15, no.5, pp.8715 - 8723 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/286003 | - |
dc.description.abstract | Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (similar to 300 degrees C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm(2)/(V.s) and photoresponsivity of 45134 A/W. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000656994100069 | - |
dc.identifier.scopusid | 2-s2.0-85106383338 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 8715 | - |
dc.citation.endingpage | 8723 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/acsnano.1c00811 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.localauthor | Kang, Kibum | - |
dc.contributor.nonIdAuthor | Park, Cheolmin | - |
dc.contributor.nonIdAuthor | Jung, In-young | - |
dc.contributor.nonIdAuthor | Park, Eunpyo | - |
dc.contributor.nonIdAuthor | Çiçek, Mert Miraç | - |
dc.contributor.nonIdAuthor | Lee, Injun | - |
dc.contributor.nonIdAuthor | Durgun, Engin | - |
dc.contributor.nonIdAuthor | Kwak, Joon Young | - |
dc.contributor.nonIdAuthor | Song, Seungwoo | - |
dc.contributor.nonIdAuthor | Jeong, Hu Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | cracking metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | bismuth-oxy-selenide | - |
dc.subject.keywordAuthor | low-growth temperature | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | WSE2 | - |
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