DC Field | Value | Language |
---|---|---|
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Lim, Hyeong-Rak | ko |
dc.contributor.author | Park, Juhyuk | ko |
dc.contributor.author | Jeong, Jaeyong | ko |
dc.contributor.author | Han, Jae Hoon | ko |
dc.contributor.author | Choi, Won Jun | ko |
dc.contributor.author | Kim, Hyo-Jin | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2021-06-14T06:10:18Z | - |
dc.date.available | 2021-06-14T06:10:18Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2021-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.800 - 803 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/285842 | - |
dc.description.abstract | We systematically investigated the wafer- bonded interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/ n(+)InGaAs by using a circular transmission line method (CTLM) for the increased extraction accuracy. Based on the low-temperature bonding process at 50 degrees C, the bonded interfaces were successfully fabricated without degradation of the material quality. While the fabricated devices exhibited the linearly increased resistance as a function of channel distances, the p(+)InGaAs/n(+)InGaAs structure revealed the improved interfacial resistivity of 3.9 x 10(-3) Omega center dot cm(2) compared with 3.3x10(-2) Omega center dot cm(2) of the p(+)GaAs/n(+)InGaAs. Since these values suggested good electrical properties in wafer-bonded structures, the developed wafer-bonded interfaces could be a good approach for integrating electronic and optoelectronic devices. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs | - |
dc.type | Article | - |
dc.identifier.wosid | 000652794800005 | - |
dc.identifier.scopusid | 2-s2.0-85105078350 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 800 | - |
dc.citation.endingpage | 803 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2021.3076817 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Han, Jae Hoon | - |
dc.contributor.nonIdAuthor | Choi, Won Jun | - |
dc.contributor.nonIdAuthor | Kim, Hyo-Jin | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Wafer bonding | - |
dc.subject.keywordAuthor | p(+)GaAs/n(+)InGaAs | - |
dc.subject.keywordAuthor | p(+)InGaAs/n(+)InGaAs | - |
dc.subject.keywordPlus | GAAS SOLAR-CELL | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | MODEL | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.