DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaeyong | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Kim, Jongmin | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Park, Juyeong | ko |
dc.contributor.author | Jang, Jae-Hyung | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2021-05-25T07:30:09Z | - |
dc.date.available | 2021-05-25T07:30:09Z | - |
dc.date.created | 2021-05-25 | - |
dc.date.created | 2021-05-25 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/285330 | - |
dc.description.abstract | In this article, we have demonstrated 125-nm- gate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of this device were the i-In0.53Ga0.47As/i-InAs/ i-In0.53Ga0.47As quantum-well channel for high RF performance by improving electron transport properties and the low processing temperature of 250 degrees C or less for monolithic 3-D integration. As a result, we obtained a current gain cutoff frequency (f(T)) of 227 GHz and a maximum oscillation frequency (f(MAX)) of 187 GHz. These results are the highest ever reported in monolithic 3-D RF transistors above L-G = 100 nm. In addition, through the small-signal modeling, we have found that the impact of the back-gate (BG) on RF performances of top devices is a critical issue in M3D RF systems. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration | - |
dc.type | Article | - |
dc.identifier.wosid | 000642766300008 | - |
dc.identifier.scopusid | 2-s2.0-85103233942 | - |
dc.type.rims | ART | - |
dc.citation.volume | 68 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 2205 | - |
dc.citation.endingpage | 2211 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2021.3064527 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Kim, Jongmin | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Park, Juyeong | - |
dc.contributor.nonIdAuthor | Jang, Jae-Hyung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | III-V on Si | - |
dc.subject.keywordAuthor | high-frequency | - |
dc.subject.keywordAuthor | InGaAs high-electron-mobility transistors (HEMTs) | - |
dc.subject.keywordAuthor | InGaAs-oninsulator (InGaAs-OI) | - |
dc.subject.keywordAuthor | InGaAs on Si | - |
dc.subject.keywordAuthor | monolithic 3-D (M3D) | - |
dc.subject.keywordAuthor | wafer bonding | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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