Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

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dc.contributor.authorJeong, Jaeyongko
dc.contributor.authorKim, Seong Kwangko
dc.contributor.authorKim, Jongminko
dc.contributor.authorGeum, Dae-Myeongko
dc.contributor.authorPark, Juyeongko
dc.contributor.authorJang, Jae-Hyungko
dc.contributor.authorKim, Sanghyeonko
dc.date.accessioned2021-05-25T07:30:09Z-
dc.date.available2021-05-25T07:30:09Z-
dc.date.created2021-05-25-
dc.date.created2021-05-25-
dc.date.issued2021-05-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/285330-
dc.description.abstractIn this article, we have demonstrated 125-nm- gate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of this device were the i-In0.53Ga0.47As/i-InAs/ i-In0.53Ga0.47As quantum-well channel for high RF performance by improving electron transport properties and the low processing temperature of 250 degrees C or less for monolithic 3-D integration. As a result, we obtained a current gain cutoff frequency (f(T)) of 227 GHz and a maximum oscillation frequency (f(MAX)) of 187 GHz. These results are the highest ever reported in monolithic 3-D RF transistors above L-G = 100 nm. In addition, through the small-signal modeling, we have found that the impact of the back-gate (BG) on RF performances of top devices is a critical issue in M3D RF systems.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleStackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration-
dc.typeArticle-
dc.identifier.wosid000642766300008-
dc.identifier.scopusid2-s2.0-85103233942-
dc.type.rimsART-
dc.citation.volume68-
dc.citation.issue5-
dc.citation.beginningpage2205-
dc.citation.endingpage2211-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2021.3064527-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorKim, Jongmin-
dc.contributor.nonIdAuthorGeum, Dae-Myeong-
dc.contributor.nonIdAuthorPark, Juyeong-
dc.contributor.nonIdAuthorJang, Jae-Hyung-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorIII-V on Si-
dc.subject.keywordAuthorhigh-frequency-
dc.subject.keywordAuthorInGaAs high-electron-mobility transistors (HEMTs)-
dc.subject.keywordAuthorInGaAs-oninsulator (InGaAs-OI)-
dc.subject.keywordAuthorInGaAs on Si-
dc.subject.keywordAuthormonolithic 3-D (M3D)-
dc.subject.keywordAuthorwafer bonding-
dc.subject.keywordPlusELECTRON-MOBILITY-
dc.subject.keywordPlusTRANSISTORS-
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