Monolithic integration of all-Si PN doped waveguide photodetector and JFET for silicon photonics = 실리콘 포토닉스 기반 도파로 형태의 실리콘 광검출기와 접합 전계효과 트랜지스터의 모놀리식 통합

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In the 1550 nm wavelength, which is mainly used wavelength for optical communication, the energy band gap of silicon is 1.1 eV, so that silicon is not proper to detect the light of this wavelength. Nevertheless, research on photodetectors using silicon in silicon photonics has been actively conducted through various approaches. In this thesis, we suggested that an optical silicon waveguide with a high doping PN junction on an SOI wafer can be used as a photodetector. Also, we proposed a junction field effect transistor (JFET) with the same mask with optical components. We suggested a possibility of JFET to be used as transimpedance amplifier of silicon photodetector. Silicon-based photodetector and junction field effect transistor will be used as key devices for monolithic integration of silicon photonics.
Advisors
Yu, Kyoungsikresearcher유경식researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2020
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2020.2,[iii, 43 p. :]

Keywords

Silicon Photonics▼aPhotodetector▼aPN junction▼aMonolithic integration▼aSilicon on Insulator▼aFranz-Keldysh effect; 실리콘 포토닉스▼a광 검출기▼a금속학적 접합▼a모놀리식 통합▼a절연체 위의 실리콘▼a프란츠 켈디쉬 효과

URI
http://hdl.handle.net/10203/284725
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=911334&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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