(A) study on the effect of material properties of gate oxide on VCMA effect

Abstract

The origin of perpendicular magnetic anisotropy arising at the ferromagnet/oxide interface is considered due to the orbital hybridization. Therefore, it has been reported that the magnetic properties of the ferromagnetic layer can be controlled by changing the state of the interface through an electric field. In particular, changing the oxidation state of the interface through the migration of oxygen ions in the oxide by the electric field has been actively studied because it can control the magnetic properties efficiently and has a non-volatile characteristic that maintains the changed magnetic properties. In this paper, we report on the material property of oxide that influences the Voltage-Controlled Magnetic Anisotropy (VCMA) effect. $TiO_2$ was adopted for the study, and it was confirmed that the VCMA effect on $TiO_2$ gate oxide is due to the migration of oxygen ions. The experiments showed that the amount of change in magnetic properties varies depending on the deposition temperature of the oxide. From the material analyses of the oxide, the material property affecting the VCMA effect is identified.