DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Cho, Byung Jin | - |
dc.contributor.advisor | 조병진 | - |
dc.contributor.author | Lee, Tae In | - |
dc.date.accessioned | 2021-05-12T19:31:49Z | - |
dc.date.available | 2021-05-12T19:31:49Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=886659&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/283738 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2017.2,[vii, 43 p. :] | - |
dc.description.abstract | In this thesis, the effect of annealing on the $GeO_2$/Ge based gate stack was investigated. The interface trap density ($D_{it}$) between the high-k dielectric and germanium is high, which may adversely affect the driving of the device. The properties of the interface can be improved by using a germanium oxide between the high-k dielectric and germanium. The effective work function of the gate metal is reduced by annealing in the high-k/$GeO_2$/Ge gate stack, and the value is reduced by about 0.5 eV regardless of the kind of the gate metal. The change of effective work function was also confirmed by the MOSFET. For the analysis, the composition ratio depending on the position of the dielectric was confirmed through angle resolved X-ray photoelectron analysis. In addition, the $D_{it}$ was extracted by using conductance method, and the trapping efficiency and capture cross section were extracted and compared by constant current stress test (CCST) before and after annealing. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Ge▼a$GeO_2$▼aeffective work function▼athreshold voltage▼aoxygen vacancy | - |
dc.subject | 저마늄▼a저마늄 산화막▼a유효 일함수▼a문턱 전압▼a산소 공동 | - |
dc.title | Evaluation of effective work function and electrical properties via post-deposition annealing on $GeO_2$/Ge based gate stack | - |
dc.title.alternative | 저마늄 산화막/저마늄 기반의 게이트 구조에서 열처리에 따른 유효 일함수 및 전기적 특성 평가 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | 이태인 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.