(A) study on the material, electrical and reliability properties of $Hf_{0.5}Zr_{0.5}O_2$ based ferroelectric devices with $RuO_2$ electrodes by atomic layer deposition원자층 증착법을 이용한 루테늄 옥사이드 산화물 전극에 따른 하프늄-지르코늄 옥사이드 기반 강유전체 소자의 물성 분석, 전기적 특성과 신뢰성 특성 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 171
  • Download : 0
DC FieldValueLanguage
dc.contributor.advisorPark, Sang Hee-
dc.contributor.advisor박상희-
dc.contributor.authorCho, Sung Hyun-
dc.date.accessioned2021-05-11T19:32:50Z-
dc.date.available2021-05-11T19:32:50Z-
dc.date.issued2019-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=875304&flag=dissertationen_US
dc.identifier.urihttp://hdl.handle.net/10203/283010-
dc.description학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.8,[viii, 76 p. :]-
dc.description.abstractThe purpose of this research is to analyze the material, electrical and reliability properties of hafnium-zirconium oxide($Hf_{0.5}Zr_{0.5}O_2$) based ferroelectric devices based on ruthenium oxide electrodes using atomic layer deposition(ALD). The ruthenium oxide electrode deposited by ALD method was applied to the metal-ferroelectric-metal(MFM) devices to suppress the oxygen vacancy in the hafnium thin films which cause the wake-up effect and the degradation of reliability. The difference in material, electrical and reliability characteristics was analyzed by applying titanium nitride(TiN) which are typical electrode materials and ruthenium oxide($RuO_2$) thin films to the top electrode(TE), respectively. The device with $RuO_2$ electrode at the TE has less oxygen vacancy at the interface with the upper hafnium - zirconium oxide than the device with the TiN TE. Less oxygen vacancy occurred at the upper interface between $RuO_2$ and $Hf_{0.5}Zr_{0.5}O_2$, resulting in less wake-up effect and improved electrical properties. However, another improvement goal, reliability, did not improve. Through electrical analysis, it was confirmed that the work function of the electrode changed at the interface, and indirectly found that the $RuO_2$ was reduced to ruthenium(Ru) through materials property analysis. During rapid thermal annealing(RTA) process, the reduction to Ru led to a decrease in work function, which in turn resulted in poorer leakage properties.-
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectferroelectricity▼ahafnium-zirconium oxide($Hf_{0.5}Zr_{0.5}O_2$)▼aruthenium oxide($RuO_2$)▼aatomic layer deposition(ALD)▼atitanium nitride(TiN)▼ametal-ferroelectric-metal(MFM) capacitor▼aoxygen vacancy($V_o$)▼areliability▼awake-up effect▼anon-volatile memory-
dc.subject강유전성▼a하프늄-지르코늄 옥사이드▼a루테늄 옥사이드▼a원자층 증착법▼a타이타늄 나이트라이드▼a금속-강유전체-금속 캐패시터▼a산소 결원▼a신뢰성▼a웨이크-업 효과▼a비휘발성 메모리-
dc.title(A) study on the material, electrical and reliability properties of $Hf_{0.5}Zr_{0.5}O_2$ based ferroelectric devices with $RuO_2$ electrodes by atomic layer deposition-
dc.title.alternative원자층 증착법을 이용한 루테늄 옥사이드 산화물 전극에 따른 하프늄-지르코늄 옥사이드 기반 강유전체 소자의 물성 분석, 전기적 특성과 신뢰성 특성 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN325007-
dc.description.department한국과학기술원 :신소재공학과,-
dc.contributor.alternativeauthor조성현-
Appears in Collection
MS-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0