Electronic device using two dimensional semiconductor material이차원 반도체 소재를 이용한 전자소자
Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.
- Assignee
- KAIST
- Country
- US (United States)
- Application Date
- 2018-12-20
- Application Number
- 16226950
- Registration Date
- 2021-06-01
- Registration Number
- 11024759
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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