DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Wooseok | ko |
dc.contributor.author | Winkler, Joerg | ko |
dc.contributor.author | Schmidt, Hennrik | ko |
dc.contributor.author | Lee, Kwang-Heum | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2021-03-11T04:50:09Z | - |
dc.date.available | 2021-03-11T04:50:09Z | - |
dc.date.created | 2021-03-11 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v.859 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/10203/281476 | - |
dc.description.abstract | Developing high-resolution displays to achieve realistic images have been in a great demand recently regardless of the display size. However, in the backplane technology, the channel-shortening effect is a serious obstacle in realizing oxide thin film transistors (TFTs) with short channel lengths. In this study, we investigated the channel-shortening effect of Al-doped InSnZnO (Al:ITZO) thin-film transistors (TFTs) with Mo and Mo-based alloy Cu diffusion barriers and proposed Mo-Al alloy as a Cu diffusion barrier to effectively reduce the channel-shortening effect. The TFTs with the Mo (Cu diffusion barrier) exhibited negative V-on shifts and a channel-shortening length (Delta L) of 3.52 mu m at an annealing temperature of 290 degrees C, although no chemical reaction occurred at the Mo/Al:ITZO interfaces. In addition, the TFTs with the Mo-Ti (Cu diffusion barrier) showed the largest Delta V-on and Delta L values at various annealing temperatures. The material and electrical analysis results confirmed that the hydrogen diffusion from the source/drain region is the main cause of the channel-shortening effect. Thus, the TFTs with the Mo-Al (Cu diffusion barrier) exhibited excellent characteristics against the channel-shortening effect by forming a uniform and thin Al2O3 layer at the Mo-Al/Al:ITZO interface and preventing the hydrogen diffusion. The Delta V-on remained almost unchanged, and the Delta L was 1.61 mu m up to an annealing temperature of 290 degrees C. This study suggests a highly beneficial method for producing oxide TFTs, while suppressing the channel-shortening effect by tailoring the interface between source/drain and active layer using an appropriate Cu diffusion electrode. (C) 2020 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000614114500133 | - |
dc.identifier.scopusid | 2-s2.0-85099644555 | - |
dc.type.rims | ART | - |
dc.citation.volume | 859 | - |
dc.citation.publicationname | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.158227 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Winkler, Joerg | - |
dc.contributor.nonIdAuthor | Schmidt, Hennrik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MoAl alloy | - |
dc.subject.keywordAuthor | Cu diffusion barrier | - |
dc.subject.keywordAuthor | Self-aligned coplanar TFT | - |
dc.subject.keywordAuthor | High-mobility | - |
dc.subject.keywordAuthor | Hydrogen diffusion | - |
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