Controlled growth of SrBi2Ta2O9 thin films by the rf magnetron sputtering deposition

Abstract

The a-/b-, c-axis oriented, and polycrystalline SrBi2Ta2O9 thin films were grown on (110) MgO, (100) MgO, and Pt/TiO2/SiO2/Si substrates, respectively, at 800 degrees C using the rf magnetron sputtering deposition method. The structures of the films were characterized by the x-ray theta-2 theta scan and the transmission electron microscope. The surface morphologies of the films, investigated by the atomic force microscope and the scanning electron microscope, showed the growth of elliptic or rod-like grains for the a-/b-axis oriented films. Transverse optical phonons, which are consistent with the layered perovskite structure of the films, were observed by the infrared reflectance spectroscope. The composition ratios of the films were analyzed by the electron probe microanalysis. The P*-P<^> and coercive field of the SET film on Pt/TiO2/SiO2/Si substrate are about 1 mu C/cm(2) and 30 kV/cm.