DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Chang Goo | ko |
dc.contributor.author | Kang, Jang Won | ko |
dc.contributor.author | Lee, Sang Kyung | ko |
dc.contributor.author | Lee, Seung Yong | ko |
dc.contributor.author | Cho, Chun Hum | ko |
dc.contributor.author | Hwang, Hyeon Jun | ko |
dc.contributor.author | Lee, Young Gon | ko |
dc.contributor.author | Heo, Jinseong | ko |
dc.contributor.author | Chung, Hyun-Jong | ko |
dc.contributor.author | Yang, Heejun | ko |
dc.contributor.author | Seo, Sunae | ko |
dc.contributor.author | Park, Seong-Ju | ko |
dc.contributor.author | Ko, Ki Young | ko |
dc.contributor.author | Ahn, Jinho | ko |
dc.contributor.author | Lee, Byoung Hun | ko |
dc.date.accessioned | 2021-01-28T06:15:09Z | - |
dc.date.available | 2021-01-28T06:15:09Z | - |
dc.date.created | 2021-01-26 | - |
dc.date.created | 2021-01-26 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.22, no.29, pp.295201 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280253 | - |
dc.description.abstract | A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 mu m long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and similar to 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al2O3, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I-d-V-g) curves were demonstrated and a field effect mobility up to similar to 1200 cm(2) V-1 s(-1) was achieved at V-d = 10 mV. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask | - |
dc.type | Article | - |
dc.identifier.wosid | 000291871200007 | - |
dc.identifier.scopusid | 2-s2.0-79960459865 | - |
dc.type.rims | ART | - |
dc.citation.volume | 22 | - |
dc.citation.issue | 29 | - |
dc.citation.beginningpage | 295201 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/22/29/295201 | - |
dc.contributor.localauthor | Yang, Heejun | - |
dc.contributor.nonIdAuthor | Kang, Chang Goo | - |
dc.contributor.nonIdAuthor | Kang, Jang Won | - |
dc.contributor.nonIdAuthor | Lee, Sang Kyung | - |
dc.contributor.nonIdAuthor | Lee, Seung Yong | - |
dc.contributor.nonIdAuthor | Cho, Chun Hum | - |
dc.contributor.nonIdAuthor | Hwang, Hyeon Jun | - |
dc.contributor.nonIdAuthor | Lee, Young Gon | - |
dc.contributor.nonIdAuthor | Heo, Jinseong | - |
dc.contributor.nonIdAuthor | Chung, Hyun-Jong | - |
dc.contributor.nonIdAuthor | Seo, Sunae | - |
dc.contributor.nonIdAuthor | Park, Seong-Ju | - |
dc.contributor.nonIdAuthor | Ko, Ki Young | - |
dc.contributor.nonIdAuthor | Ahn, Jinho | - |
dc.contributor.nonIdAuthor | Lee, Byoung Hun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | SUPPRESSION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | SIO2 | - |
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