The paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface

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dc.contributor.authorYang, H.ko
dc.contributor.authorBoudrioua, O.ko
dc.contributor.authorMayne, A. J.ko
dc.contributor.authorComtet, G.ko
dc.contributor.authorDujardin, G.ko
dc.contributor.authorKuk, Y.ko
dc.contributor.authorSonnet, Phko
dc.contributor.authorStauffer, L.ko
dc.contributor.authorNagarajan, S.ko
dc.contributor.authorGourdon, A.ko
dc.date.accessioned2021-01-28T06:14:46Z-
dc.date.available2021-01-28T06:14:46Z-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.issued2012-
dc.identifier.citationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.14, no.5, pp.1700 - 1705-
dc.identifier.issn1463-9076-
dc.identifier.urihttp://hdl.handle.net/10203/280243-
dc.description.abstractControlling the intrinsic optical and electronic properties of a single molecule adsorbed on a surface requires electronic decoupling of some molecular orbitals from the surface states. Scanning tunneling microscopy experiments and density functional theory calculations are used to study a perylene molecule derivative (DHH-PTCDI), adsorbed on the clean 3 x 3 reconstructed wide band gap silicon carbide surface (SiC(0001)-3 x 3). We find that the LUMO of the adsorbed molecule is invisible in I(V) spectra due to the absence of any surface or bulk states and that the HOMO has a very low saturation current in I(z) spectra. These results present a paradox that the molecular orbitals are electronically isolated from the surface of the wide band gap semiconductor even though strong chemical bonds are formed.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleThe paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface-
dc.typeArticle-
dc.identifier.wosid000299113000021-
dc.identifier.scopusid2-s2.0-84862908029-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.issue5-
dc.citation.beginningpage1700-
dc.citation.endingpage1705-
dc.citation.publicationnamePHYSICAL CHEMISTRY CHEMICAL PHYSICS-
dc.identifier.doi10.1039/c2cp23104b-
dc.contributor.localauthorYang, H.-
dc.contributor.nonIdAuthorBoudrioua, O.-
dc.contributor.nonIdAuthorMayne, A. J.-
dc.contributor.nonIdAuthorComtet, G.-
dc.contributor.nonIdAuthorDujardin, G.-
dc.contributor.nonIdAuthorKuk, Y.-
dc.contributor.nonIdAuthorSonnet, Ph-
dc.contributor.nonIdAuthorStauffer, L.-
dc.contributor.nonIdAuthorNagarajan, S.-
dc.contributor.nonIdAuthorGourdon, A.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPTCDA-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFILMS-
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