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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Graphene for True Ohmic Contact at Metal-Semiconductor Junctions

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dc.contributor.authorByun, Kyung-Eunko
dc.contributor.authorChung, Hyun-Jongko
dc.contributor.authorLee, Jaehoko
dc.contributor.authorYang, Heejunko
dc.contributor.authorSong, Hyun Jaeko
dc.contributor.authorHeo, Jinseongko
dc.contributor.authorSeo, David H.ko
dc.contributor.authorPark, Seongjunko
dc.contributor.authorHwang, Sung Wooko
dc.contributor.authorYoo, InKyeongko
dc.contributor.authorKim, Kinamko
dc.date.accessioned2021-01-28T06:14:10Z-
dc.date.available2021-01-28T06:14:10Z-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.issued2013-09-
dc.identifier.citationNANO LETTERS, v.13, no.9, pp.4001 - 4005-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/280232-
dc.description.abstractThe rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) similar to 10(-9) Omega cm(2) at a Si doping concentration of 10(17) cm(-3).-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleGraphene for True Ohmic Contact at Metal-Semiconductor Junctions-
dc.typeArticle-
dc.identifier.wosid000330158900007-
dc.identifier.scopusid2-s2.0-84884249960-
dc.type.rimsART-
dc.citation.volume13-
dc.citation.issue9-
dc.citation.beginningpage4001-
dc.citation.endingpage4005-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl402367y-
dc.contributor.localauthorYang, Heejun-
dc.contributor.nonIdAuthorByun, Kyung-Eun-
dc.contributor.nonIdAuthorChung, Hyun-Jong-
dc.contributor.nonIdAuthorLee, Jaeho-
dc.contributor.nonIdAuthorSong, Hyun Jae-
dc.contributor.nonIdAuthorHeo, Jinseong-
dc.contributor.nonIdAuthorSeo, David H.-
dc.contributor.nonIdAuthorPark, Seongjun-
dc.contributor.nonIdAuthorHwang, Sung Woo-
dc.contributor.nonIdAuthorYoo, InKyeong-
dc.contributor.nonIdAuthorKim, Kinam-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGraphene-
dc.subject.keywordAuthormetal-semiconductor junction-
dc.subject.keywordAuthorOhmic contact-
dc.subject.keywordAuthorSchottky barrier-
dc.subject.keywordAuthorNi-Si junction-
dc.subject.keywordPlusSCHOTTKY-BARRIER-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusFILMS-
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PH-Journal Papers(저널논문)
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