DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hyeonchul | ko |
dc.contributor.author | Jeong, Minsu | ko |
dc.contributor.author | Kim, Gahui | ko |
dc.contributor.author | Son, Kirak | ko |
dc.contributor.author | Seo, Jeongmin | ko |
dc.contributor.author | Kim, Taek-Soo | ko |
dc.contributor.author | Park, Young-Bae | ko |
dc.date.accessioned | 2021-01-04T08:10:43Z | - |
dc.date.available | 2021-01-04T08:10:43Z | - |
dc.date.created | 2020-04-27 | - |
dc.date.created | 2020-04-27 | - |
dc.date.created | 2020-04-27 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v.16, no.4, pp.311 - 320 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/279452 | - |
dc.description.abstract | Effects of Co interlayer and 200 degrees C post-annealing treatment on interfacial adhesion energy of SiNx/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiNx/Cu structure measured by double cantilever beam test was 0.92 J/m(2). The interfacial adhesion energy increased to 2.94 J/m(2) with Co interlayer between SiNx and Cu films. After post-annealing treatment at 200 degrees C for 500 h, the interfacial adhesion energy of SiNx/Co/Cu structure decreased to 0.95 J/m(2). X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiNx/Co/Cu thin films due to CoSi2 reaction layer at SiNx/Co interface, but sharply decreased during post-annealing treatment by SiO2 formation at SiNx/Co interface. | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections | - |
dc.type | Article | - |
dc.identifier.wosid | 000524624600001 | - |
dc.identifier.scopusid | 2-s2.0-85083388434 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 311 | - |
dc.citation.endingpage | 320 | - |
dc.citation.publicationname | ELECTRONIC MATERIALS LETTERS | - |
dc.identifier.doi | 10.1007/s13391-020-00210-7 | - |
dc.identifier.kciid | ART002594722 | - |
dc.contributor.localauthor | Kim, Taek-Soo | - |
dc.contributor.nonIdAuthor | Lee, Hyeonchul | - |
dc.contributor.nonIdAuthor | Jeong, Minsu | - |
dc.contributor.nonIdAuthor | Kim, Gahui | - |
dc.contributor.nonIdAuthor | Son, Kirak | - |
dc.contributor.nonIdAuthor | Park, Young-Bae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cu interconnections | - |
dc.subject.keywordAuthor | Co interlayer | - |
dc.subject.keywordAuthor | Double cantilever beam test | - |
dc.subject.keywordAuthor | Interfacial adhesion energy | - |
dc.subject.keywordAuthor | Post-annealing | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ELECTROMIGRATION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | CMP | - |
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