Robust quantum point contact via trench gate modulation

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Quantum point contacts (QPC) are a primary component in mesoscopic physics and have come to serve various purposes in modern quantum devices. However, fabricating a QPC that operates robustly under extreme conditions, such as high bias or magnetic fields, still remains an important challenge. As a solution, we have analyzed the trench-gated QPC (t-QPC) that has a central gate in addition to the split-gate structure used in conventional QPCs (c-QPC). From simulation and modelling, we predicted that the t-QPC has larger and more even subband spacings over a wider range of transmission when compared to the c-QPC. After an experimental verification, the two QPCs were investigated in the quantum Hall regimes as well. At high fields, the maximally available conductance was achievable in the t-QPC due to the local carrier density modulation by the trench gate. Furthermore, the t-QPC presented less anomalies in its DC bias dependence, indicating a possible suppression of impurity effects.
Publisher
NATURE RESEARCH
Issue Date
2020-11
Language
English
Article Type
Article
Citation

SCIENTIFIC REPORTS, v.10, no.1, pp.19746

ISSN
2045-2322
DOI
10.1038/s41598-020-76790-z
URI
http://hdl.handle.net/10203/278914
Appears in Collection
PH-Journal Papers(저널논문)
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